Discrete Semiconductor Products
RGTH60TK65DGC11
NRNDRohm Semiconductor
HIGH-SPEED SWITCHING TYPE, 650V 30A, FRD BUILT-IN, TO-3PFM, FIELD STOP TRENCH IGBT
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Discrete Semiconductor Products
RGTH60TK65DGC11
NRNDRohm Semiconductor
HIGH-SPEED SWITCHING TYPE, 650V 30A, FRD BUILT-IN, TO-3PFM, FIELD STOP TRENCH IGBT
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Technical Specifications
Parameters and characteristics for this part
| Specification | RGTH60TK65DGC11 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 28 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 58 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-3PFM, SC-93-3 |
| Power - Max [Max] | 61 W |
| Reverse Recovery Time (trr) | 58 ns |
| Supplier Device Package | TO-3PFM |
| Td (on/off) @ 25°C [custom] | 27 ns |
| Td (on/off) @ 25°C [custom] | 105 ns |
| Test Condition | 30 A, 10 Ohm, 15 V, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RGTH60TK65D Series
ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
Documents
Technical documentation and resources