
Integrated Circuits (ICs)
IS62WV12816EBLL-45TLI
ActiveISSI, Integrated Silicon Solution Inc
SRAM 2MB, LOW POWER/POWER SAVER,ASYNC,128K X 16,45NS,2.2V-3.6V,44 PIN TSOP II, ROHS
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Integrated Circuits (ICs)
IS62WV12816EBLL-45TLI
ActiveISSI, Integrated Silicon Solution Inc
SRAM 2MB, LOW POWER/POWER SAVER,ASYNC,128K X 16,45NS,2.2V-3.6V,44 PIN TSOP II, ROHS
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Technical Specifications
Parameters and characteristics for this part
| Specification | IS62WV12816EBLL-45TLI |
|---|---|
| Access Time | 45 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization [custom] | 128 K |
| Memory Size | 2 Gbit |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | 44-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 44-TSOP II |
| Technology | SRAM - Asynchronous |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.2 V |
| Write Cycle Time - Word, Page [custom] | 45 ns |
| Write Cycle Time - Word, Page [custom] | 45 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IS62WV12816 Series
High-speed access time: 45ns, 55ns
CMOS low power operationOperating Current: 18 mA (max) at 85°CCMOS Standby Current: 5.4uA (typ) at 25°C
Operating Current: 18 mA (max) at 85°C
Documents
Technical documentation and resources
No documents available