Discrete Semiconductor Products

V8PM6-M3/H

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DIODE SCHOTTKY 60V 8A TO277A

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Discrete Semiconductor Products

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DIODE SCHOTTKY 60V 8A TO277A

Technical Specifications

Parameters and characteristics for this part

Specification	V8PM6-M3/H

Capacitance @ Vr, F	1150 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	600 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	3-PowerDFN, TO-277
Speed	200 mA, 500 ns
Supplier Device Package	TO-277A (SMPC)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	640 mV

Part	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Speed	Current - Average Rectified (Io)	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Capacitance @ Vr, F	Technology	Current - Reverse Leakage @ Vr	Qualification	Grade
Vishay General Semiconductor - Diodes Division V8PM6-M3/H	640 mV	TO-277A (SMPC)	60 V	3-PowerDFN TO-277	200 mA 500 ns	8 A	Surface Mount	-40 °C	175 ░C	1150 pF	Schottky	600 µA
Vishay General Semiconductor - Diodes Division V8PM6HM3/I	640 mV	TO-277A (SMPC)	60 V	3-PowerDFN TO-277	200 mA 500 ns	8 A	Surface Mount	-40 °C	175 ░C	1150 pF	Schottky	600 µA	AEC-Q101	Automotive
Vishay General Semiconductor - Diodes Division V8PM6HM3/H	640 mV	TO-277A (SMPC)	60 V	3-PowerDFN TO-277	200 mA 500 ns	8 A	Surface Mount	-40 °C	175 ░C	1150 pF	Schottky	600 µA	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 60 V 8A Surface Mount TO-277A (SMPC)

Technical documentation and resources