Specification	FDMS3016DC

Current - Continuous Drain (Id) @ 25°C	49 A, 18 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	1385 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	60 W, 3.3 W
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDMS3008SDC Series

N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM 30V, 65A, 2.6mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDMS3016DC	-55 °C	150 °C	MOSFET (Metal Oxide)	18 A 49 A	N-Channel	30 V	4.5 V 10 V	23 nC	8-PowerTDFN	1385 pF	20 V	6 mOhm	8-PQFN (5x6)	3 V	Surface Mount	3.3 W 60 W
ON Semiconductor FDMS3008SDC	-55 °C	150 °C	MOSFET (Metal Oxide)	29 A	N-Channel	30 V	4.5 V 10 V		8-PowerTDFN	4520 pF	20 V		Dual Cool™56	3 V	Surface Mount		64 nC	3.3 W	78 W	2.6 mOhm
ON Semiconductor FDMS3008SDC	-55 °C	150 °C	MOSFET (Metal Oxide)	29 A	N-Channel	30 V	4.5 V 10 V		8-PowerTDFN	4520 pF	20 V		8-PQFN (5x6)	3 V	Surface Mount		64 nC	3.3 W	78 W	2.6 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMS3008SDC Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.