Discrete Semiconductor Products

SI8451DB-T2-E1

Obsolete

MOSFET P-CH 20V 10.8A 6MICROFOOT

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 10.8A 6MICROFOOT

Technical Specifications

Parameters and characteristics for this part

Specification	SI8451DB-T2-E1

Current - Continuous Drain (Id) @ 25°C	10.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UFBGA
Power Dissipation (Max)	13 W, 2.77 W
Rds On (Max) @ Id, Vgs [Max]	80 mOhm
Supplier Device Package	6-Micro Foot™ (1.5x1)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division SI8451DB-T2-E1	P-Channel	10.8 A	-55 °C	150 °C	750 pF	20 V	MOSFET (Metal Oxide)	24 nC	8 V	1 V	Surface Mount	2.77 W 13 W	6-UFBGA	6-Micro Foot™ (1.5x1)	1.5 V 4.5 V	80 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 10.8A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

Technical documentation and resources