Discrete Semiconductor Products

BSH103,235

NRND

MOSFET N-CH 30V 850MA TO236AB

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Discrete Semiconductor Products

NRND

MOSFET N-CH 30V 850MA TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	BSH103,235

Current - Continuous Drain (Id) @ 25°C	850 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.1 nC
Input Capacitance (Ciss) (Max) @ Vds	83 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	540 mW
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs
Freescale Semiconductor - NXP BSH103,235	SC-59 SOT-23-3 TO-236-3	83 pF	8 V	850 mA	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	TO-236AB	540 mW	2.5 V	2.1 nC	30 V	N-Channel	400 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 850mA (Ta) 540mW (Ta) Surface Mount TO-236AB

Technical documentation and resources