Specification	FDPF14N30

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	1060 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs	290 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDPF14N30 Series

Power MOSFET, N-Channel, UniFETTM, 300 V, 14 A, 290 mΩ, TO-220F

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Supplier Device Package	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs
ON Semiconductor FDPF14N30	MOSFET (Metal Oxide)	14 A	30 V	Through Hole	TO-220-3 Full Pack	-55 °C	150 °C	1060 pF	10 V	300 V	25 nC	N-Channel	TO-220F-3	35 W	5 V	290 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.25
		10	$ 1.44
		100	$ 0.98

Description

General part information

FDPF14N30 Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.