Discrete Semiconductor Products

IRF644SPBF

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 250V 14A D2PAK

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Discrete Semiconductor Products

IRF644SPBF

Active

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 250V 14A D2PAK

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF644SPBF

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.1 W, 125 W
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRF644 Series

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division IRF644N	240 mOhm	14 A	N-Channel	250 V	TO-220AB	-55 °C	175 ░C	4 V	20 V	54 nC	1060 pF	Through Hole	MOSFET (Metal Oxide)	150 W	TO-220-3	10 V
Vishay General Semiconductor - Diodes Division IRF644NPBF	240 mOhm	14 A	N-Channel	250 V	TO-220AB	-55 °C	175 ░C	4 V	20 V	54 nC	1060 pF	Through Hole	MOSFET (Metal Oxide)	150 W	TO-220-3	10 V
Vishay General Semiconductor - Diodes Division IRF644L	280 mOhm	14 A	N-Channel	250 V	I2PAK	-55 °C	150 °C	4 V	20 V		1300 pF	Through Hole	MOSFET (Metal Oxide)		I2PAK TO-262-3 Long Leads TO-262AA	10 V	68 nC
Vishay General Semiconductor - Diodes Division IRF644SPBF	280 mOhm	14 A	N-Channel	250 V	TO-263 (D2PAK)	-55 °C	150 °C	4 V	20 V		1300 pF	Surface Mount	MOSFET (Metal Oxide)	3.1 W 125 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	68 nC
Vishay General Semiconductor - Diodes Division IRF644S	280 mOhm	14 A	N-Channel	250 V	TO-263 (D2PAK)	-55 °C	150 °C	4 V	20 V		1300 pF	Surface Mount	MOSFET (Metal Oxide)	3.1 W 125 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	68 nC
Vishay General Semiconductor - Diodes Division IRF644NS	240 mOhm	14 A	N-Channel	250 V	TO-263 (D2PAK)	-55 °C	175 ░C	4 V	20 V	54 nC	1060 pF	Surface Mount	MOSFET (Metal Oxide)	150 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V
Vishay General Semiconductor - Diodes Division IRF644PBF	280 mOhm	14 A	N-Channel	250 V	TO-220AB	-55 °C	150 °C	4 V	20 V		1300 pF	Through Hole	MOSFET (Metal Oxide)	125 W	TO-220-3	10 V	68 nC
Vishay General Semiconductor - Diodes Division IRF644STRRPBF	280 mOhm	14 A	N-Channel	250 V	TO-263 (D2PAK)	-55 °C	150 °C	4 V	20 V		1300 pF	Surface Mount	MOSFET (Metal Oxide)	3.1 W 125 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	68 nC
Vishay General Semiconductor - Diodes Division IRF644NLPBF	240 mOhm	14 A	N-Channel	250 V	I2PAK	-55 °C	175 ░C	4 V	20 V	54 nC	1060 pF	Through Hole	MOSFET (Metal Oxide)	150 W	I2PAK TO-262-3 Long Leads TO-262AA	10 V
Vishay General Semiconductor - Diodes Division IRF644NSPBF	240 mOhm	14 A	N-Channel	250 V	TO-263 (D2PAK)	-55 °C	175 ░C	4 V	20 V	54 nC	1060 pF	Surface Mount	MOSFET (Metal Oxide)	150 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.45
		50	$ 2.74
		100	$ 2.34
		500	$ 2.08
		1000	$ 1.78
		2000	$ 1.68
		5000	$ 1.61

Description

General part information

IRF644 Series

N-Channel 250 V 14A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources