Discrete Semiconductor Products

MCU45N10HE3-TP

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N-CHANNEL MOSFET, DPAK

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Discrete Semiconductor Products

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N-CHANNEL MOSFET, DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	MCU45N10HE3-TP

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1135 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	72 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Technology	Power Dissipation (Max) [Max]	Grade	Power Dissipation (Max)	Qualification
Micro Commercial Components MCU45P04-TP	40 V	14 mOhm	45 A	2451 pF	DPAK	2.5 V	52.2 nC	Surface Mount	-55 °C	150 °C	P-Channel	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	MOSFET (Metal Oxide)	70 W
Micro Commercial Components MCU45N10HE3-TP	100 V	17 mOhm	45 A	1135 pF	TO-252 (DPAK)	2.5 V	16 nC	Surface Mount	-55 °C	150 °C	N-Channel	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	MOSFET (Metal Oxide)		Automotive	72 W	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 45A 72W (Tj) Surface Mount TO-252 (DPAK)

Technical documentation and resources