Discrete Semiconductor Products

IXTH20P50P

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POWER MOSFET, P CHANNEL, 500 V, 20 A, 0.45 OHM, TO-247, THROUGH HOLE

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Discrete Semiconductor Products

Active

POWER MOSFET, P CHANNEL, 500 V, 20 A, 0.45 OHM, TO-247, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH20P50P

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	103 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5120 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	460 W
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
Littelfuse/Commercial Vehicle Products IXTH20P50P	103 nC	20 V	20 A	Through Hole	TO-247-3	450 mOhm	5120 pF	460 W	4 V	TO-247 (IXTH)	P-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	500 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 500 V 20A (Tc) 460W (Tc) Through Hole TO-247 (IXTH)

Technical documentation and resources