Discrete Semiconductor Products

PSMN3R7-100BSEJ

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MOSFET N-CH 100V 120A D2PAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 100V 120A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN3R7-100BSEJ

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	246 nC
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Rds On (Max) @ Id, Vgs	3.95 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature	Vgs (Max)
Freescale Semiconductor - NXP PSMN3R7-100BSEJ	MOSFET (Metal Oxide)	246 nC	3.95 mOhm	Surface Mount	N-Channel	10 V	D2PAK	120 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	100 V	175 °C	20 V

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General part information

N-Channel 100 V 120A (Tc) 405W (Tc) Surface Mount D2PAK

Technical documentation and resources