Discrete Semiconductor Products
RS6G100BGTB1
ActiveRohm Semiconductor
NCH 40V 100A, HSOP8, POWER MOSFET
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Discrete Semiconductor Products
RS6G100BGTB1
ActiveRohm Semiconductor
NCH 40V 100A, HSOP8, POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RS6G100BGTB1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 24 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1510 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 59 W, 3 W |
| Rds On (Max) @ Id, Vgs | 3.4 mOhm |
| Supplier Device Package | 8-HSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RS6G100BG Series
RS6G100BG is a power MOSFET with low-on resistance and High power small mold package, suitable for switching.
Documents
Technical documentation and resources