Discrete Semiconductor Products

SIA462DJ-T1-GE3

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MOSFET N-CH 30V 12A PPAK SC70-6

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Discrete Semiconductor Products

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MOSFET N-CH 30V 12A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA462DJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W, 19 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	PowerPAK® SC-70-6 Single
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Package / Case	FET Type	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SIA462DJ-T1-GE3	17 nC	PowerPAK® SC-70-6	N-Channel	MOSFET (Metal Oxide)	18 mOhm	3.5 W 19 W	30 V	12 A	Surface Mount	4.5 V 10 V	PowerPAK® SC-70-6 Single	570 pF	20 V	-55 °C	150 °C	2.4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

Technical documentation and resources