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GBU4G-E3/45
Discrete Semiconductor Products

GBU6M-E3/51

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Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 1KV 3.8A GBU

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GBU4G-E3/45
Discrete Semiconductor Products

GBU6M-E3/51

Active
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 1KV 3.8A GBU

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationGBU6M-E3/51
Current - Average Rectified (Io)3.8 A
Current - Reverse Leakage @ Vr5 µA
Diode TypeSingle Phase
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case4-SIP, GBU
Supplier Device PackageGBU
TechnologyStandard
Voltage - Forward (Vf) (Max) @ If1 V
Voltage - Peak Reverse (Max) [Max]1000 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 2.92
10$ 1.89
250$ 1.15
500$ 1.05
1000$ 0.97
2000$ 0.91
5000$ 0.88

Description

General part information

GBU6 Series

Bridge Rectifier Single Phase Standard 1 kV Through Hole GBU

Documents

Technical documentation and resources