
Discrete Semiconductor Products
GBU6M-E3/51
ActiveVishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 1KV 3.8A GBU
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Search across all available documentation for this part.

Discrete Semiconductor Products
GBU6M-E3/51
ActiveVishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 1KV 3.8A GBU
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | GBU6M-E3/51 |
|---|---|
| Current - Average Rectified (Io) | 3.8 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Diode Type | Single Phase |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 4-SIP, GBU |
| Supplier Device Package | GBU |
| Technology | Standard |
| Voltage - Forward (Vf) (Max) @ If | 1 V |
| Voltage - Peak Reverse (Max) [Max] | 1000 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 2.92 | |
| 10 | $ 1.89 | |||
| 250 | $ 1.15 | |||
| 500 | $ 1.05 | |||
| 1000 | $ 0.97 | |||
| 2000 | $ 0.91 | |||
| 5000 | $ 0.88 | |||
Description
General part information
GBU6 Series
Bridge Rectifier Single Phase Standard 1 kV Through Hole GBU
Documents
Technical documentation and resources