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BPV11
Sensors, Transducers

BPV11

Active
Vishay Semiconductor Opto Division

PHOTOTRANSISTOR 450 TO 1080 NM

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BPV11
Sensors, Transducers

BPV11

Active
Vishay Semiconductor Opto Division

PHOTOTRANSISTOR 450 TO 1080 NM

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBPV11
Current - Collector (Ic) (Max)0.01 mA
Current - Dark (Id) (Max)50 nA
Mounting TypeThrough Hole
Operating Temperature (Max)100 °C
Operating Temperature (Min)-40 °C
OrientationTop View
Package Diameter5 mm
Package NameRadial
Power - Max150 mW
Viewing Angle30 °
Voltage - Collector Emitter Breakdown (Max)70 V
Wavelength850 nm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBulk 1$ 1.03<2d
10$ 0.72
100$ 0.53
500$ 0.45
1000$ 0.42
2000$ 0.40
6000$ 0.37
10000$ 0.36
26000$ 0.34

CAD

3D models and CAD resources for this part

Description

General part information

BPV11 Series

Phototransistors 850nm Top View Radial, 5mm Dia (T 1 3/4)

Documents

Technical documentation and resources