Specification	SSM6J424TU,LF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	23.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1650 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs [Max]	22.5 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	6 V, -8 V
Vgs(th) (Max) @ Id	1 V

SSM6J424TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -6.0 A, 0.0225 Ω@4.5V, SOT-363F(UF6)

Part	Operating Temperature	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
Toshiba Semiconductor and Storage SSM6J424TU,LF	150 °C	6-SMD Flat Leads	23.1 nC	6 A	MOSFET (Metal Oxide)	1 V	P-Channel	22.5 mOhm	UF6	1 W	1650 pF	Surface Mount	-8 V 6 V	20 V	1.5 V 4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -6.0 A, 0.0225 Ω@4.5V, SOT-363F(UF6)

Technical documentation and resources