Discrete Semiconductor Products

TJ200F04M3L,LXHQ

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TRANS MOSFET P-CH SI 40V 200A AUTOMOTIVE AEC-Q101 3-PIN(2+TAB) TO-220SM(W) T/R

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Discrete Semiconductor Products

Active

TRANS MOSFET P-CH SI 40V 200A AUTOMOTIVE AEC-Q101 3-PIN(2+TAB) TO-220SM(W) T/R

Technical Specifications

Parameters and characteristics for this part

Specification	TJ200F04M3L,LXHQ

Current - Continuous Drain (Id) @ 25°C	200 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	460 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1280 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	375 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.8 mOhm
Supplier Device Package	TO-220SM(W)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature	Qualification	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Vgs (Max) [Max]	Vgs (Max) [Min]	Supplier Device Package	Grade	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology
Toshiba Semiconductor and Storage TJ200F04M3L,LXHQ	175 °C	AEC-Q101	Surface Mount	3 V	460 nC	1280 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	-20 V	TO-220SM(W)	Automotive	P-Channel	200 A	375 W	40 V	1.8 mOhm	6 V 10 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 40 V 200A (Ta) 375W (Tc) Surface Mount TO-220SM(W)

Technical documentation and resources