Discrete Semiconductor Products

2SD2153T100W

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BIPOLAR TRANSISTORS - BJT TRANS GP BJT NPN 25V 2A 4PIN

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Discrete Semiconductor Products

Active

BIPOLAR TRANSISTORS - BJT TRANS GP BJT NPN 25V 2A 4PIN

Technical Specifications

Parameters and characteristics for this part

Specification	2SD2153T100W

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	1200
Frequency - Transition	110 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Supplier Device Package	MPT3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	25 V

Part	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Power - Max [Max]	Transistor Type	Supplier Device Package	Package / Case
Rohm Semiconductor 2SD2153T100W	Surface Mount	1200	500 mV	500 nA	2 A	150 °C	25 V	110 MHz	2 W	NPN	MPT3	TO-243AA
Rohm Semiconductor 2SD2153T100V	Surface Mount	820	500 mV	500 nA	2 A	150 °C	25 V	110 MHz	2 W	NPN	MPT3	TO-243AA
Rohm Semiconductor 2SD2153T100U	Surface Mount	820	500 mV	500 nA	2 A	150 °C	25 V	110 MHz	2 W	NPN	MPT3	TO-243AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 25 V 2 A 110MHz 2 W Surface Mount MPT3

Technical documentation and resources