Discrete Semiconductor Products

CSD25201W15

Obsolete

MOSFET P-CH 20V 4A 9DSBGA

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 4A 9DSBGA

Technical Specifications

Parameters and characteristics for this part

Specification	CSD25201W15

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5.6 nC
Input Capacitance (Ciss) (Max) @ Vds	510 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	DSBGA, 9-UFBGA
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	9-DSBGA
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-6 V
Vgs(th) (Max) @ Id	1.1 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
Texas Instruments CSD25201W15	510 pF	40 mOhm	9-DSBGA	P-Channel	-55 °C	150 °C	4 A	MOSFET (Metal Oxide)	1.1 V	20 V	-6 V	Surface Mount	1.8 V 4.5 V	9-UFBGA DSBGA	1.5 W	5.6 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 4A (Ta) 1.5W (Ta) Surface Mount 9-DSBGA

Technical documentation and resources