Discrete Semiconductor Products

SI7228DN-T1-GE3

Obsolete

MOSFET 2N-CH 30V 26A PPAK 1212

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 26A PPAK 1212

Technical Specifications

Parameters and characteristics for this part

Specification	SI7228DN-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds	480 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8 Dual
Power - Max [Max]	23 W
Rds On (Max) @ Id, Vgs [Max]	20 mOhm
Supplier Device Package	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Power - Max [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI7228DN-T1-GE3	20 mOhm	480 pF	13 nC	PowerPAK® 1212-8 Dual	23 W	2 N-Channel (Dual)	26 A	30 V	Surface Mount	MOSFET (Metal Oxide)	-55 °C	150 °C	PowerPAK® 1212-8 Dual	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 26A 23W Surface Mount PowerPAK® 1212-8 Dual

Technical documentation and resources