Specification	XPH3R114MC,L1XHQ

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	230 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	9500 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	960 mW, 170 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.1 mOhm
Supplier Device Package	8-SOP Advance
Supplier Device Package [x]	5
Supplier Device Package [y]	5
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	2.1 V

XPH3R114MC Series

Part	Qualification	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max) [Max]	Vgs (Max) [Min]	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	FET Type	Technology	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Grade	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Toshiba Semiconductor and Storage XPH3R114MC,L1XHQ	AEC-Q101	Surface Mount	3.1 mOhm	40 V	9500 pF	8-PowerVDFN	10 V	-20 V	175 °C	4.5 V 10 V	2.1 V	170 W 960 mW	P-Channel	MOSFET (Metal Oxide)	5	8-SOP Advance	5	Automotive	100 A	230 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 40 V 100A (Ta) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)

Technical documentation and resources