Specification	XPJ1R004PB,LXHQ

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	84 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	6890 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	5-PowerSFN
Power Dissipation (Max)	223 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1 mOhm
Supplier Device Package	S-TOGL™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

XPJ1R004PB Series

12V - 300V MOSFETs, N-ch MOSFET, 40 V, 160 A, 0.0010 Ω@10V, S-TOGL

Part	Rds On (Max) @ Id, Vgs	Qualification	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade
Toshiba Semiconductor and Storage XPJ1R004PB,LXHQ	1 mOhm	AEC-Q101	S-TOGL™	6 V 10 V	175 °C	40 V	MOSFET (Metal Oxide)	3 V	223 W	160 A	20 V	N-Channel	Surface Mount	5-PowerSFN	6890 pF	84 nC	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

12V - 300V MOSFETs, N-ch MOSFET, 40 V, 160 A, 0.0010 Ω@10V, S-TOGL

Technical documentation and resources