UPA1727G-E1-AT

Obsolete

UPA1727G-E1-AT - MOS FIELD EFFEC

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Discrete Semiconductor Products

Obsolete

UPA1727G-E1-AT - MOS FIELD EFFEC

Technical Specifications

Parameters and characteristics for this part

Specification	UPA1727G-E1-AT

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2400 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	0.173 in
Package / Case	4.4 mm
Package / Case	8-SOIC
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	19 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Power MOSFETs for Automotive

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Mounting Type	Vgs (Max)	Package / Case	Package / Case	Package / Case	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation UPA1727G-E1-AT	8-SOP	10 A	MOSFET (Metal Oxide)	2400 pF	N-Channel	150 °C	4 V	10 V	45 nC	19 mOhm	2 W	Surface Mount	20 V	0.173 in	4.4 mm	8-SOIC	2.5 V	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Nch Single Power MOSFET 60V 10A 19mohm Power SOP8 Automotive

Technical documentation and resources