Specification	CSD17304Q3

Current - Continuous Drain (Id) @ 25°C	15 A, 56 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	3 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.6 nC
Input Capacitance (Ciss) (Max) @ Vds	955 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.7 W
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	8-VSON-CLIP (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1.8 V

CSD17304Q3 Series

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 8.8 mOhm

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type	Power Dissipation (Max)
Texas Instruments CSD17304Q3	MOSFET (Metal Oxide)	6.6 nC	10 V	-8 V	15 A 56 A	955 pF	8-PowerTDFN	30 V	N-Channel	7.5 mOhm	-55 °C	150 °C	1.8 V	8-VSON-CLIP (3.3x3.3)	8 V	3 V	Surface Mount	2.7 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

Technical documentation and resources