Discrete Semiconductor Products

1N1183A

Active

DIODE GEN PURP 50V 40A DO203AB

Discrete Semiconductor Products

Active

DIODE GEN PURP 50V 40A DO203AB

Technical Specifications

Parameters and characteristics for this part

Specification	1N1183A

Current - Average Rectified (Io)	40 A
Current - Reverse Leakage	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction (Max)	200 °C
Operating Temperature - Junction (Min)	-65 °C
Package / Case	Stud, DO-5, DO-203AB
Package Name	DO-203AB
Speed	Standard Recovery
Speed - Fast Recovery (Minimum)	200 mA, 500 ns
Speed - Recovery Current	200 mA, 200 mA
Speed - Recovery Time	500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	50 V
Voltage - Forward (Vf) (Max)	1.1 V

Part	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Package Name	Package / Case	Technology	Current - Reverse Leakage	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time	Voltage - Forward (Vf) (Max)	Mounting Type
GeneSiC Semiconductor 1N1183A	200 °C	-65 °C	DO-203AB	DO-203AB DO-5 Stud	Standard	10 µA	40 A	50 V	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1.1 V	Chassis Stud Mount
GeneSiC Semiconductor 1N1183	190 °C	-65 °C	DO-203AB	DO-203AB DO-5 Stud	Standard	10 µA	35 A	50 V	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns	1.2 V	Chassis Stud Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

Diode 50 V 40A Chassis, Stud Mount DO-203AB

Technical documentation and resources