Specification	CSD16406Q3

Current - Continuous Drain (Id) @ 25°C	19 A, 60 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.7 W
Rds On (Max) @ Id, Vgs	5.3 mOhm
Supplier Device Package	8-VSON-CLIP (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-12 V, 16 V
Vgs(th) (Max) @ Id [Max]	2.2 V

CSD16406Q3 Series

25-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 7.4 mOhm

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max) [Max]
Texas Instruments CSD16406Q3	25 V	-55 °C	150 °C	8.1 nC	N-Channel	8-PowerTDFN	5.3 mOhm	19 A 60 A	4.5 V 10 V	MOSFET (Metal Oxide)	Surface Mount	8-VSON-CLIP (3.3x3.3)	2.2 V	2.7 W	1100 pF	-12 V 16 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 25 V, 4.2 mΩ, 3.3 mm × 3.3 mm SON NexFET power MOSFET has been designed to minimize losses in power conversion applications.

Technical documentation and resources