Discrete Semiconductor Products

FCP7N60_F080

Obsolete

MOSFET N-CH 600V 7A TO220-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 7A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	FCP7N60_F080

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	920 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case
ON Semiconductor FCP7N60_F080	10 V	N-Channel	600 mOhm	920 pF	30 V	MOSFET (Metal Oxide)	600 V	7 A	Through Hole	83 W	30 nC	5 V	-55 °C	150 °C	TO-220-3	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 7A (Tc) 83W (Tc) Through Hole TO-220-3

Technical documentation and resources