Specification	MJF15030

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220FP
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	150 V

MJF15030 Series

8.0 A, 150 V NPN Bipolar Power Transistor

Part	Transistor Type	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Supplier Device Package	Mounting Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Current - Collector Cutoff (Max) [Max]
ON Semiconductor MJF15030	NPN	30 MHz	20	2 W	TO-220FP	Through Hole	8 A	500 mV	150 °C	-65 °C	150 V	TO-220-3 Full Pack	10 µA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MJF15030 Series

The Bipolar Power Transistor is designed for general-purpose amplifier and switching applications, where mounting surface of the device is required to be electrically isolated from the heatsink or chassis.