Discrete Semiconductor Products

EML20T2R

NRND

TRANS PREBIAS NPN 50V 0.1A EMT6

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Discrete Semiconductor Products

NRND

TRANS PREBIAS NPN 50V 0.1A EMT6

Technical Specifications

Parameters and characteristics for this part

Specification	EML20T2R

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	150 mW
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	EMT6
Transistor Type	NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Frequency - Transition	Resistor - Emitter Base (R2)	Mounting Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Resistor - Base (R1)	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Rohm Semiconductor EML20T2R	250 MHz	47000 Ohms	Surface Mount	SOT-563 SOT-666	500 nA	EMT6	50 V	2.2 kOhm	300 mV	100 mA	150 mW	NPN - Pre-Biased + Diode	80

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 50 V 100 mA 250 MHz 150 mW Surface Mount EMT6

Technical documentation and resources

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