Specification	NTD3817N-35G

Current - Continuous Drain (Id) @ 25°C	34.5 A, 7.6 A
Drain to Source Voltage (Vdss)	16 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.5 nC
Input Capacitance (Ciss) (Max) @ Vds	702 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	25.9 W, 1.2 W
Rds On (Max) @ Id, Vgs	13.9 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.5 V

NTD3808N Series

Power MOSFET 16 V, 75 A, Single N-Channel

Part	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor NTD3817N-35G	13.9 mOhm	MOSFET (Metal Oxide)	16 V	702 pF	TO-251-3 Stub Leads IPAK	IPAK	16 V	1.2 W 25.9 W	Through Hole	N-Channel	-55 °C	175 ░C	2.5 V	10.5 nC	4.5 V 10 V	7.6 A 34.5 A
ON Semiconductor NTD3808N-1G	5.8 mOhm	MOSFET (Metal Oxide)	16 V	1660 pF	IPAK TO-251-3 Short Leads TO-251AA	IPAK	16 V	1.3 W 52 W	Through Hole	N-Channel	-55 °C	175 ░C	2.5 V		4.5 V 10 V	12 A 76 A	21 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 16 V, 76 A, Single N-Channel

Technical documentation and resources