Discrete Semiconductor Products

2N7335

Obsolete

MOSFET 4P-CH 100V 0.75A MO-036AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 4P-CH 100V 0.75A MO-036AB

Technical Specifications

Parameters and characteristics for this part

Specification	2N7335

Configuration	4 P-Channel
Current - Continuous Drain (Id) @ 25°C	750 mA
Drain to Source Voltage (Vdss)	100 V
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	14-DIP
Package / Case	0.3 in
Package / Case	7.62 mm
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	MO-036AB
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Package / Case	Package / Case	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Configuration	Vgs(th) (Max) @ Id	Power - Max [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs
Microsemi Corporation 2N7335	MO-036AB	14-DIP	0.3 in	7.62 mm	100 V	1.4 Ohm	150 °C	-55 °C	Through Hole	750 mA	4 P-Channel	4 V	1.4 W	MOSFET (Metal Oxide)
Microsemi Corporation 2N7334	MO-036AB	14-DIP	0.3 in	7.62 mm	100 V	700 mOhm	150 °C	-55 °C	Through Hole	1 A	4 N-Channel	4 V	1.4 W	MOSFET (Metal Oxide)	60 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Mosfet Array 100V 750mA 1.4W Through Hole MO-036AB

Technical documentation and resources

No documents available