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Technical Specifications
Parameters and characteristics for this part
| Specification | MBR4015LWT |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 20 A |
| Current - Reverse Leakage @ Vr | 5 mA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-247-3 |
| Technology | Schottky |
| Voltage - Forward (Vf) (Max) @ If [Max] | 420 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MBR4015LWT Series
The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. The Schottky Rectifier features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.
Documents
Technical documentation and resources