Discrete Semiconductor Products

2SK4150TZ-E

Obsolete

NCH SINGLE POWER MOSFET 250V 0.4A 5700MOHM TO-92(1)

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

NCH SINGLE POWER MOSFET 250V 0.4A 5700MOHM TO-92(1)

Technical Specifications

Parameters and characteristics for this part

Specification	2SK4150TZ-E

Current - Continuous Drain (Id) @ 25°C	400 mA
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3.7 nC
Input Capacitance (Ciss) (Max) @ Vds	80 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power Dissipation (Max)	750 mW
Rds On (Max) @ Id, Vgs	5.7 Ohm
Supplier Device Package	TO-92
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V

Nch Single Power Mosfet 250V 0.4A 5700Mohm To-92(1)

Part	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature	Vgs (Max)	FET Type	Power Dissipation (Max)	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Package / Case
Renesas Electronics Corporation 2SK4150TZ-E	4 V	2.5 V	400 mA	Through Hole	TO-92	5.7 Ohm	150 °C	10 V	N-Channel	750 mW	TO-226-3 TO-92-3 (TO-226AA) Formed Leads	MOSFET (Metal Oxide)	80 pF	250 V	3.7 nC
Renesas Electronics Corporation 2SK4150TZ-E	4 V	2.5 V	400 mA	Through Hole	TO-92	5.7 Ohm	150 °C	10 V	N-Channel	750 mW	TO-226-3 TO-92-3	MOSFET (Metal Oxide)	80 pF	250 V	3.7 nC	1.5 V	TO-226AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The 2SK4150 is a Nch Single Power Mosfet 250V 0.4A 5700Mohm To-92(1).

Technical documentation and resources