Discrete Semiconductor Products

SICRB10650CT

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DIODE SIL CARBIDE 650V 5A D2PAK

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Discrete Semiconductor Products

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DIODE SIL CARBIDE 650V 5A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SICRB10650CT

Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	60 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	D2PAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Technology	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Speed	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Supplier Device Package	Mounting Type
SMC Diode Solutions SICRB10650CT	SiC (Silicon Carbide) Schottky	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	175 ░C	-55 C	1.7 V	0 ns	No Recovery Time	60 µA	650 V	5 A	D2PAK	Surface Mount

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General part information

Diode 650 V 5A Surface Mount D2PAK

Technical documentation and resources