Zenode.ai Logo
Beta
SOT 23-3
Discrete Semiconductor Products

MGSF2N02ELT1G

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 20 V, 2.8 A, 0.078 OHM, SOT-23, SURFACE MOUNT

Deep-Dive with AI

Search across all available documentation for this part.

SOT 23-3
Discrete Semiconductor Products

MGSF2N02ELT1G

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 20 V, 2.8 A, 0.078 OHM, SOT-23, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationMGSF2N02ELT1G
Current - Continuous Drain (Id) @ 25°C2.8 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]3.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]150 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)1.25 W
Rds On (Max) @ Id, Vgs [Max]85 mOhm
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.58
10$ 0.36
100$ 0.23
500$ 0.17
1000$ 0.15
Digi-Reel® 1$ 0.58
10$ 0.36
100$ 0.23
500$ 0.17
1000$ 0.15
Tape & Reel (TR) 3000$ 0.13
6000$ 0.12
9000$ 0.11
15000$ 0.11
21000$ 0.10
30000$ 0.10
75000$ 0.10
ON SemiconductorN/A 1$ 0.09

Description

General part information

MGSF2N02EL Series

These miniature surface mount MOSFETs low RDS(on)assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry.