Discrete Semiconductor Products

SI3473DDV-T1-GE3

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MOSFET P-CHANNEL 12V 8A 6TSOP

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Discrete Semiconductor Products

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MOSFET P-CHANNEL 12V 8A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3473DDV-T1-GE3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	57 nC
Input Capacitance (Ciss) (Max) @ Vds	1975 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	3.6 W
Rds On (Max) @ Id, Vgs	17.8 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI3473DDV-T1-GE3	12 V	P-Channel	8 V	1.8 V 4.5 V	1 V	Surface Mount	57 nC	MOSFET (Metal Oxide)	3.6 W	1975 pF	6-TSOP	SOT-23-6 Thin TSOT-23-6	8 A	17.8 mOhm	-55 °C	150 °C

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General part information

P-Channel 12 V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP

Technical documentation and resources