Discrete Semiconductor Products

IXYP15N65C3

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IGBT 650V 38A 200W TO220

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Discrete Semiconductor Products

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IGBT 650V 38A 200W TO220

Technical Specifications

Parameters and characteristics for this part

Specification	IXYP15N65C3

Current - Collector (Ic) (Max) [Max]	38 A
Current - Collector Pulsed (Icm)	80 A
Gate Charge	19 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	200 W
Supplier Device Package	TO-220-3
Switching Energy	230 µJ, 270 µJ
Td (on/off) @ 25°C	15 ns, 68 ns
Test Condition	400 V, 15 A, 20 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Current - Collector Pulsed (Icm)	Gate Charge	Vce(on) (Max) @ Vge, Ic	Test Condition	Switching Energy	Mounting Type	IGBT Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Package / Case	Td (on/off) @ 25°C	Reverse Recovery Time (trr)
IXYS IXYP15N65C3	-55 °C	175 ░C	650 V	200 W	80 A	19 nC	2.5 V	15 A 15 V 20 Ohm 400 V	230 µJ 270 µJ	Through Hole	PT	TO-220-3	38 A	TO-220-3	15 ns 68 ns
IXYS IXYP15N65C3D1	-55 °C	175 ░C	650 V	200 W	80 A	19 nC	2.5 V	15 A 15 V 20 Ohm 400 V	230 µJ 270 µJ	Through Hole	PT	TO-220-3	38 A	TO-220-3	15 ns 68 ns	110 ns
IXYS IXYP15N65C3D1M	-55 °C	175 ░C	650 V		80 A	19 nC	2.5 V	15 A 15 V 20 Ohm 400 V	230 µJ 270 µJ	Through Hole	PT	TO-220-3	16 A	TO-220-3	15 ns 68 ns	30 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 1.83

General part information

IGBT PT 650 V 38 A 200 W Through Hole TO-220-3

Technical documentation and resources

No documents available