Discrete Semiconductor Products

NVMFWS004N10MCT1G

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MOSFET - POWER, SINGLE, N-CHANNEL 100 V, 3.9MΩ, 138A

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Discrete Semiconductor Products

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MOSFET - POWER, SINGLE, N-CHANNEL 100 V, 3.9MΩ, 138A

Technical Specifications

Parameters and characteristics for this part

Specification	NVMFWS004N10MCT1G

Current - Continuous Drain (Id) @ 25°C	21 A, 138 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3600 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	164 W, 3.8 W
Qualification	AEC-Q101
Supplier Device Package	4.9x5.9, 8-SOFL-WF, 5-DFNW
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

MOSFET - Power, Single, N-Channel 100 V, 3.9mΩ, 138A

Part	Vgs(th) (Max) @ Id	Grade	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Qualification	Package / Case	Power Dissipation (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology
ON Semiconductor NVMFWS004N10MCT1G	4 V	Automotive	4.9x5.9 5-DFNW 8-SOFL-WF	Surface Mount Wettable Flank	-55 °C	175 ░C	10 V	48 nC	20 V	100 V	AEC-Q101	8-PowerTDFN 5 Leads	3.8 W 164 W	N-Channel	21 A 138 A	3600 pF	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.57
	Digi-Reel®	1	$ 3.57
	Tape & Reel (TR)	1500	$ 1.16
Newark	Each (Supplied on Full Reel)	1000	$ 1.60
		1000	$ 1.60
ON Semiconductor	N/A	1	$ 1.24

General part information

MOSFET - Power, Single, N-Channel 100 V, 3.9mΩ, 138A

Technical documentation and resources