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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

IPB042N10N3GATMA1

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INFINEON

POWER MOSFET, N CHANNEL, 100 V, 100 A, 0.0036 OHM, TO-263 (D2PAK), SURFACE MOUNT

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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Discrete Semiconductor Products

IPB042N10N3GATMA1

Active
INFINEON

POWER MOSFET, N CHANNEL, 100 V, 100 A, 0.0036 OHM, TO-263 (D2PAK), SURFACE MOUNT

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPB042N10N3GATMA1
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs117 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]8410 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max) [Max]214 W
Rds On (Max) @ Id, Vgs4.2 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.75
10$ 2.46
100$ 1.72
500$ 1.41
Digi-Reel® 1$ 3.75
10$ 2.46
100$ 1.72
500$ 1.41
N/A 25309$ 2.08
Tape & Reel (TR) 1000$ 1.28

Description

General part information

IPB042 Series

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).

Documents

Technical documentation and resources