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IPD50P04P413AUMA2
Discrete Semiconductor Products

IPD50P04P413AUMA2

Obsolete
INFINEON

MOSFET

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IPD50P04P413AUMA2
Discrete Semiconductor Products

IPD50P04P413AUMA2

Obsolete
INFINEON

MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD50P04P413AUMA2
Current - Continuous Drain (Id) @ 25°C50 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs51 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds3670 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)58 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs12.6 mOhm
Supplier Device PackagePG-TO252-3-313
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

IPD50 Series

P-Channel 40 V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3-313

Documents

Technical documentation and resources

No documents available