Discrete Semiconductor Products

IPN80R600P7ATMA1

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MOSFET, N-CH, 800V, 8A, SOT-223 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, N-CH, 800V, 8A, SOT-223 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IPN80R600P7ATMA1

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	PG-SOT223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	3.5 V

Part	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	FET Type
INFINEON IPN80R600P7ATMA1	Surface Mount	MOSFET (Metal Oxide)	20 nC	600 mOhm	TO-261-4 TO-261AA	570 pF	20 V	PG-SOT223	3.5 V	8 A	800 V	10 V	150 °C	-55 °C	N-Channel

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General part information

N-Channel 800 V 8A (Tc) 7.4W (Tc) Surface Mount PG-SOT223

Technical documentation and resources