Discrete Semiconductor Products

IPS70R1K4CEAKMA1

Obsolete

MOSFET N-CH 700V 5.4A TO251

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 700V 5.4A TO251

Technical Specifications

Parameters and characteristics for this part

Specification	IPS70R1K4CEAKMA1

Current - Continuous Drain (Id) @ 25°C	5.4 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.5 nC
Input Capacitance (Ciss) (Max) @ Vds	225 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	53 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	PG-TO251-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
INFINEON IPS70R1K4CEAKMA1	53 W	700 V	-40 °C	150 °C	20 V	3.5 V	225 pF	1.4 Ohm	10.5 nC	TO-251-3 Stub Leads IPAK	MOSFET (Metal Oxide)	5.4 A	N-Channel	PG-TO251-3-11	Through Hole	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 700 V 5.4A (Tc) 53W (Tc) Through Hole PG-TO251-3-11

Technical documentation and resources