Discrete Semiconductor Products
IRF250P225
ActiveINFINEON
POWER MOSFET, N CHANNEL, 250 V, 69 A, 0.022 OHM, TO-247AC, THROUGH HOLE
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Discrete Semiconductor Products
IRF250P225
ActiveINFINEON
POWER MOSFET, N CHANNEL, 250 V, 69 A, 0.022 OHM, TO-247AC, THROUGH HOLE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF250P225 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 69 A |
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4897 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 313 W |
| Rds On (Max) @ Id, Vgs | 22 mOhm |
| Supplier Device Package | TO-247AC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRF250 Series
Improved Gate, Avalanche and Dynamic dv/dt RuggednessFully Characterized Capacitance and Avalanche SOAEnhanced body diode dv/dt and di/dt CapabilityLead-Free, RoHS Compliant
Documents
Technical documentation and resources
