RCX100N25
ActivePOWER FIELD-EFFECT TRANSISTOR, 10A I(D), 250V, 0.32OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB, TO-220FM, 3 PIN
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RCX100N25
ActivePOWER FIELD-EFFECT TRANSISTOR, 10A I(D), 250V, 0.32OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB, TO-220FM, 3 PIN
Technical Specifications
Parameters and characteristics for this part
| Specification | RCX100N25 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 40 W |
| Supplier Device Package | TO-220FM |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 1.52 | |
| 10 | $ 1.26 | |||
| 100 | $ 1.00 | |||
| 500 | $ 0.91 | |||
Description
General part information
RCX100N25 Series
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Documents
Technical documentation and resources