Discrete Semiconductor Products
PXP012-30QLJ
ActiveNexperia USA Inc.
MOSFETS 30 V, P-CHANNEL TRENCH MOSFET
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Discrete Semiconductor Products
PXP012-30QLJ
ActiveNexperia USA Inc.
MOSFETS 30 V, P-CHANNEL TRENCH MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | PXP012-30QLJ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 38.8 A, 8.9 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 43.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 1.7 W, 32 W |
| Rds On (Max) @ Id, Vgs | 12.8 mOhm |
| Supplier Device Package | MLPAK33 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PXP012-30QL Series
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources