Discrete Semiconductor Products

AUIRGSL4062D1

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IGBT TRENCH 600V 59A TO-262

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Discrete Semiconductor Products

Active

IGBT TRENCH 600V 59A TO-262

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRGSL4062D1

Current - Collector (Ic) (Max) [Max]	59 A
Gate Charge	77 nC
IGBT Type	Trench
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power - Max [Max]	246 W
Reverse Recovery Time (trr)	102 ns
Supplier Device Package	TO-262
Switching Energy	311 µJ, 532 µJ
Td (on/off) @ 25°C [custom]	90 ns
Td (on/off) @ 25°C [custom]	19 ns
Test Condition	10 Ohm, 400 V, 24 A, 15 V
Vce(on) (Max) @ Vge, Ic [Max]	1.77 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Vce(on) (Max) @ Vge, Ic [Max]	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Switching Energy	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Reverse Recovery Time (trr)	Gate Charge	Test Condition	Supplier Device Package	IGBT Type
INFINEON AUIRGSL4062D1	600 V	59 A	I2PAK TO-262-3 Long Leads TO-262AA	1.77 V	90 ns	19 ns	311 µJ 532 µJ	246 W	175 °C	-55 °C	Through Hole	102 ns	77 nC	10 Ohm 15 V 24 A 400 V	TO-262	Trench
INFINEON AUIRGSL4062D1	600 V	59 A	I2PAK TO-262-3 Long Leads TO-262AA	1.77 V	90 ns	19 ns	311 µJ 532 µJ	246 W	175 °C	-55 °C	Through Hole	102 ns	77 nC	10 Ohm 15 V 24 A 400 V	TO-262	Trench

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General part information

IGBT Trench 600 V 59 A 246 W Through Hole TO-262

Technical documentation and resources