Discrete Semiconductor Products

PZT5551-TP

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Discrete Semiconductor Products

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INTERFACE

Technical Specifications

Parameters and characteristics for this part

Specification	PZT5551-TP

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	300 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	1 W
Supplier Device Package	SOT-223
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	160 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Transistor Type	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Mounting Type
Micro Commercial Components PZT5551-TP	160 V	-55 °C	150 °C	TO-261-4 TO-261AA	80	200 mV	SOT-223	NPN	1 W	50 nA	300 MHz	600 mA	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	2500	$ 0.12

General part information

Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 1 W Surface Mount SOT-223

Technical documentation and resources