Discrete Semiconductor Products

1N4383GP-E3/54

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DIODE GEN PURP 200V 1A DO204AC

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Discrete Semiconductor Products

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DIODE GEN PURP 200V 1A DO204AC

Technical Specifications

Parameters and characteristics for this part

Specification	1N4383GP-E3/54

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 ÁA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-15, Axial, DO-204AC
Reverse Recovery Time (trr)	2 µs
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-204AC (DO-15)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If [Max]	1 V

Part	Technology	Current - Reverse Leakage @ Vr	Supplier Device Package	Mounting Type	Reverse Recovery Time (trr)	Package / Case	Voltage - Forward (Vf) (Max) @ If [Max]	Speed [Min]	Current - Average Rectified (Io)	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division 1N4383GP-E3/54	Standard	5 ÁA	DO-204AC (DO-15)	Through Hole	2 µs	Axial DO-15 DO-204AC	1 V	200 mA 500 ns	1 A	15 pF	175 ░C	-65 C	200 V

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General part information

Diode 200 V 1A Through Hole DO-204AC (DO-15)

Technical documentation and resources