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STMICROELECTRONICS STW20N95DK5
Discrete Semiconductor Products

IPW60R080P7XKSA1

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INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 80 MOHM; PRICE/PERFORMANCE

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Search across all available documentation for this part.

STMICROELECTRONICS STW20N95DK5
Discrete Semiconductor Products

IPW60R080P7XKSA1

Active
INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 80 MOHM; PRICE/PERFORMANCE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPW60R080P7XKSA1
Current - Continuous Drain (Id) @ 25°C37 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs51 nC
Input Capacitance (Ciss) (Max) @ Vds2180 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)129 W
Rds On (Max) @ Id, Vgs [Max]80 mOhm
Supplier Device PackagePG-TO247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 480$ 5.36
Tube 1$ 5.91
10$ 3.96
100$ 2.86
500$ 2.38
1000$ 2.37
NewarkEach 1$ 5.50
10$ 4.84
25$ 3.10
50$ 3.00
100$ 2.89
480$ 2.88
720$ 2.35

Description

General part information

IPW60R080 Series

The600V CoolMOS™ P7superjunction (SJ) MOSFET is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Documents

Technical documentation and resources