Discrete Semiconductor Products

PHPT60603NY-QX

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60 V, 3 A NPN HIGH POWER BIPOLAR TRANSISTOR

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Discrete Semiconductor Products

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60 V, 3 A NPN HIGH POWER BIPOLAR TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	PHPT60603NY-QX

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	140 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-100, SOT-669
Power - Max [Max]	1.25 W
Qualification	AEC-Q101
Supplier Device Package	Power-SO8, LFPAK56
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	270 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

60 V, 3 A NPN high power bipolar transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Qualification	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Mounting Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Grade	Package / Case	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Current - Collector Cutoff (Max) [Max]
Nexperia USA Inc. PHPT60603NY-QX	200	NPN	AEC-Q101	270 mV	140 MHz	Surface Mount	1.25 W	60 V	Automotive	SC-100 SOT-669	LFPAK56 Power-SO8	3 A	175 °C	100 nA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.23

General part information

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

Technical documentation and resources